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(R)
LS5018B LS5060B/LS5120B
TRISILTM
FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGES RANGE: 18V, 60V and 120V. HOLDING CURRENT = 200mA min. HIGH SURGE CURRENT CAPABILITY IPP = 100A 10/1000 s DESCRIPTION The LS50xxB series has been designed to protect telecommunication equipment against lightning and transients induced by AC power lines. Its high surge current capability makes the LS50xxB a reliable protection device for very exposed equipment, or when series resistors are very low. COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K17 - K20 VDE 0433 CNET 10/700 5/310 10/700 5/200 0.5/700 0.2/310 s s s s s s 1.5 kV 38 A 2 kV 50 A 1.5 kV 38 A
DIL8 SCHEMATIC DIAGRAM
1 2 3 4
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (Tamb =25C) Symbol IPP ITSM dI/dt dV/dt Tstg Tj TL Peak pulse current Non repetitive surge peak on-state current Critical rate of rise of on-state current Critical rate of rise of off-state voltage Parameter 10/1000 s 8/20 s tp = 20 ms Non repetitive VRM Value 100 250 50 100 5 - 40 to + 150 150 230 Unit A A A/s kV/s C C C
Storage and operating junction temperature range Maximum lead temperature for soldering during 10s
September 1998 Ed : 3A
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LS5018B/LS5060B/LS5120B
THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient on printed circuit with recommended pad layout Value 80 Unit C/W
ELECTRICAL CHARACTERISTICS (Tamb =25C) Symbol IRM VRM VBR VBO IH IBO IPP C Parameter Leakage current at stand-offvoltage Stand-off voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance
IRM @ VRM Type max.
VBR @ IR min.
VBO @ IBO max. note 1 typ.
IH min. note 2
C max. note 3 pF 150 150 150
A LS5018B LS5060B LS5120B
Note 1 : Measured at 50Hz (1 cycle) Note 2 : See test circuit Note 3 : VR = 5 V, F = 1MHz.
V 16 50 100
V 17 60 120
mA 1 1 1
V 22 85 180
mA 1300 1000 1250
mA 200 200 250
5 10 20
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LS5018B/LS5060B/LS5120B
TEST CIRCUIT 1 FOR IBO and VBO parameters:
tp = 20ms
Auto Transformer 220V/2A
static relay. K
R1
140
R2
240
220V
Vout IBO measure
Transformer 220V/800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . TEST CIRCUIT 2 for IH parameter.
R D.U.T. - VP
VBAT = - 48 V
Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max.
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LS5018B/LS5060B/LS5120B
Figure 1 : Non repetitive surge peak current versus overload duration Figure 2 : Relative variation of holding current versus junction temperature.
ITSM (A)
70 60 50 40 30 20 10
F=50Hz Tj initial=25C
IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
1E+0 1E+1 1E+2 1E+3
t(s)
0 1E-2 1E-1
Tamb (C) -20 0 20 40 60 80 100 120
0.0 -40
Figure 3 : Relative variation of breakdown voltage versus ambient temperature.
1.08 1.06 1.04 1.02 1.00 0.98 0.96 0 10 20 30 40 50 60 70
Figure 4 : Junction capacitance versus reverse applied voltage.
1000
LS5018
LS5120 LS5060
100
10 1
10
100
200
ORDER CODE
LS5
018
B
VOLTAGE
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LS5018B/LS5060B/LS5120B
MARKING : Logo, Date Code,part Number. PACKAGE MECHANICAL DATA DIL 8 Plastic DIMENSIONS Millimetres Inches Min. Typ. Max. Min. Typ. Max.
I b1
Packaging : Products supplied in antistatic tubes. Weight : 0.59g
REF. a1 B B1
F
a1
0.70 1.39 0.91 0.5 0.38 8.8 2.54 7.62
0.027 1.65 0.055 1.04 0.036 0.020 0.50 0.015 9.80 0.346 0.100 0.300 7.1 4.8 3.3 0.130 1.60 0.017
0.065 0.041 0.020 0.385
L
B
B1
b
Z
e e3 D E
b b1 D E e e3 F I L Z
8
5
1
4
0.280 0.189 0.063
0.44
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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